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IRFP260NPbF Power MOSFET

IRFP260NPbF Description

IRFP260NPbF V(BR)DSS RDS(on) max.ID 200V 0.04 50A .
Fifth Generation HEXFET Power MOSFETs utilizes advanced processing techniques to achieve extremely low onresistance per silicon area.

IRFP260NPbF Features

* Advanced Process Technology
* Dynamic dv/dt Rating
* 175°C Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* Ease of Paralleling
* Simple Drive Requirements

IRFP260NPbF Applications

* The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude th use of TO-220 devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Base part number IRFP260NPbF Package Type TO-247AC Stan

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