Datasheet4U.com - IRFP264NPBF

IRFP264NPBF Datasheet, mosfet equivalent, International Rectifier

Page 1 of IRFP264NPBF Page 2 of IRFP264NPBF Page 3 of IRFP264NPBF
  • Preview is limited to a maximum of three pages.

PDF File Details

Part number: IRFP264NPBF

Manufacturer: International Rectifier

File Size: 151.56KB

Download: 📄 Datasheet

Description: HEXFET Power MOSFET

📥 Download PDF (151.56KB) Datasheet Preview: IRFP264NPBF

PDF File Details

Part number: IRFP264NPBF

Manufacturer: International Rectifier

File Size: 151.56KB

Download: 📄 Datasheet

Description: HEXFET Power MOSFET

IRFP264NPBF Features and benefits

Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Curr.

IRFP264NPBF Application

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO.

IRFP264NPBF Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power .

Image gallery

Page 1 of IRFP264NPBF Page 2 of IRFP264NPBF Page 3 of IRFP264NPBF

TAGS

IRFP264NPBF
HEXFET
Power
MOSFET
International Rectifier

📁 Related Datasheet

IRFP264N - Power MOSFET (International Rectifier)
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si.

IRFP264 - Power MOSFET (International Rectifier)
www..com ww w.D ata Sh ee t4U .co m www..com ww w.D ata Sh ee t4U .co m www..com ww w.D ata Sh ee .

IRFP260 - Standard Power MOSFET (IXYS Corporation)
www..com Standard Power MOSFET N-Channel Enhancement Mode IRFP 260 VDSS ID (cont) RDS(on) = 200 V = 46 A = 55 mΩ Symbol VDSS VDGR VGS V.

IRFP260M - IR MOSFET (Infineon)
Features  Advanced Process Technology  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Ease of Paralle.

IRFP260MPbF - IR MOSFET (Infineon)
Features  Advanced Process Technology  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Ease of Paralle.

IRFP260MPBF - Power MOSFET (International Rectifier)
PD - 96293 IRFP260MPbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l F.

IRFP260N - Power MOSFET (International Rectifier)
PD - 95010A IRFP260NPbF l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .

IRFP260NPBF - HEXFET Power MOSFET (International Rectifier)
PD - 95010A IRFP260NPbF l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .

IRFP260PBF - Power MOSFET (International Rectifier)
PD- 95915 IRFP260PbF • Lead-Free www..com www.irf.com 1 9/27/04 IRFP260PbF www..com 2 www.irf.com IRFP260PbF www.Dat.

IRFP26N60L - Power MOSFET (Vishay)
www.vishay.com IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configur.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts