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IRFP260 Power MOSFET

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Description

www.vishay.com IRFP260 Vishay Siliconix Power MOSFET D TO-247AC G S D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 VGS = 10 V.
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Features

* Dynamic dV/dt rating
* Repetitive avalanche rated Available
* Isolated central mounting hole
* Fast switching Available
* Ease of paralleling
* Simple drive requirements
* Material categorization: for definitions of compliance please s

Applications

* where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mouting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. ORDERING INFORMATI

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