IRFP260
Vishay ↗ Siliconix
950.19kb
Power mosfet. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design
TAGS
📁 Related Datasheet
IRFP260 - Standard Power MOSFET
(IXYS Corporation)
..
Standard Power MOSFET
N-Channel Enhancement Mode
IRFP 260 VDSS
ID (cont) RDS(on)
= 200 V = 46 A = 55 mΩ
Symbol VDSS VDGR VGS V.
IRFP260 - Power MOSFET
(International Rectifier)
.
IRFP260 - N-Channel MOSFET
(INCHANGE)
iscN-Channel MOSFET Transistor
IRFP260
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤55mΩ @VGS=10V ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS =.
IRFP260M - IR MOSFET
(Infineon)
Features Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralle.
IRFP260M - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFP260M,IIRFP260M
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤40mΩ ·Enhancement mo.
IRFP260MPbF - IR MOSFET
(Infineon)
Features Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralle.
IRFP260MPBF - Power MOSFET
(International Rectifier)
PD - 96293
IRFP260MPbF
HEXFET® Power MOSFET
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l F.
IRFP260N - Power MOSFET
(International Rectifier)
PD - 95010A
IRFP260NPbF
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .
IRFP260N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFP260N,IIRFP260N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤40mΩ ·Enhancement mo.
IRFP260NPBF - HEXFET Power MOSFET
(International Rectifier)
PD - 95010A
IRFP260NPbF
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .