| Part Number | IRFP260 Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | . . |
IRFP260 Datasheet PDF
The IRFP260 is a Power MOSFET.
| Part Number | IRFP260 Datasheet |
|---|---|
| Description | Standard Power MOSFET |
| Manufacturer | IXYS |
| Overview |
Standard Power MOSFET
N-Channel Enhancement Mode
IRFP 260 VDSS
ID (cont) RDS(on)
= 200 V = 46 A = 55 mΩ
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg Md Weigh.
* International standard package JEDEC TO-247 AD * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * High commutating dv/dt rating * Fast switching times Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s ww w.D ata Sh eet 4U .co m Symbol Test Condi. |
| Part Number | IRFP260 Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Vishay |
| Overview |
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is.
* Dynamic dV/dt rating * Repetitive avalanche rated Available * Isolated central mounting hole * Fast switching Available * Ease of paralleling * Simple drive requirements * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provi. |
| Part Number | IRFP260 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
iscN-Channel MOSFET Transistor
IRFP260
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤55mΩ @VGS=10V ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum .
*Low drain-source on-resistance: RDS(ON) ≤55mΩ @VGS=10V *Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Switching Voltage Regulators *ABSOLUTE MAXIMUM RATINGS(Ta=25℃. |