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iscN-Channel MOSFET Transistor
IRFP260
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤55mΩ @VGS=10V ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
200
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
46
A
IDM
Drain Current-Single Pulsed
180
A
PD
Total Dissipation @TC=25℃
280
W
Tj
Max. Operating Junction Temperature -55~150
℃
Tstg
Storage Temperature
-55~150
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 0.45
UNIT ℃/W
isc website：www.iscsemi.
IRFP260 Datasheet
