Datasheet Summary
iscN-Channel MOSFET Transistor
- Features
- Low drain-source on-resistance:
RDS(ON) ≤55mΩ @VGS=10V
- Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- Switching Voltage Regulators
-...
