Inchange Semiconductor IRFP260
N-Channel MOSFET
IRFP260 Specifications
- Package : TO-247-3
- Mount Type : Through Hole
- Breakdown Voltage : 200V
- RDS(on) Max : 55mΩ
- Input Capacitance : 3.9nF
- Terminals : 3
- Rise Time : 30ns
- Fall Time : 28ns
- Max Power Dissipation : 280W
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | IRFP260 |
|---|---|
| Datasheet | IRFP260 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Low drain-source on-resistance: RDS(ON) ≤55mΩ @VGS=10V●Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●DESCRITION
●Switching Voltage Regulators
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 46 A IDM Drain Current-Single Pulsed 180 A PD Total Dissipation @TC=25℃ 280 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.45 UNIT ℃/W isc website： 1 isc & iscsemi is registered trademark iscN-Channel MOSFET Transistor IRFP260
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 200 V VGS(th) Gate Threshold Voltage VDS= 10V; ID=0.