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IRFP264 - N-Channel MOSFET

Datasheet Summary

Features

  • Static drain-source on-resistance: RDS(on)≤75mΩ.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – IRFP264

Datasheet Details

Part number IRFP264
Manufacturer INCHANGE
File Size 237.08 KB
Description N-Channel MOSFET
Datasheet download datasheet IRFP264 Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching power application ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 250 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 38 IDM Drain Current-Single Pulsed 150 PD Total Dissipation @TC=25℃ 280 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 0.45 62 UNIT ℃/W ℃/W IRFP264 isc website：www.
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