IRFP26N60L
IRFP26N60L is SMPS MOSFET manufactured by International Rectifier.
Features and Benefits
- Super Fast body diode eliminates the need for external diodes in ZVS applications.
- Lower Gate charge results in simpler drive requirements.
- Enhanced dv/dt capabilities offer improved ruggedness. TO-247AC
- Higher Gate voltage threshold offers improved noise immunity .
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM
Max.
26 17 100 470
Units
A W W/°C V V/ns °C c
PD @TC = 25°C Power Dissipation VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw d
3.8 ±30 30 -55 to + 150 300 (1.6mm from case ) 1.1(10) ww w.D ata Sh eet 4U .co m
N- m (lbf- in)
Diode Characteristics
Symbol Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)
Min. Typ. Max. Units
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- - 170 210 26 A 100 1.5 250 320 V
Conditions
MOSFET symbol showing the integral reverse
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Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time p-n junction diode. TJ = 25°C, IS = 26A, VGS = 0V f trr ns TJ = 25°C, IF = 26A TJ = 125°C, di/dt = 100A/µs n C...
