IRFP26N60L Datasheet | Vishay

FEATURES - Superfast body diode eliminates the need for external diodes in ZVS applications Available - Lower gate charge results in simpler drive Available requirements - Enhanced d V/dt capabilities offer improved ruggedness - Higher gate voltage threshold offers improved noise immunity - Material categorization: for definitions of pliance please see .vishay./doc?99912 Note - This datasheet provides information about parts that are Ro HS-pliant and / or parts that are non-Ro HS-pliant. For example, parts with lead (Pb) terminations are not Ro HS-pliant. Please see the information / tables in this datasheet for details. APPLICATIONS - Zero voltage switching (SMPS) - Tele and server power supplies - Uninterruptible power supplies - Motor control applications TO-247AC IRFP26N60LPb F Si HFP26N60L-E3 IRFP26N60L Si HFP26N60L ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a Linear Derating Factor Single Pulse Avalanche Energy b Repetitive Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Peak Diode Recovery d V/dt c VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C VDS VGS EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) d for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 1.7 m H, Rg = 25 Ω, IAS = 26 A, d V/dt = 21 V/ns (see fig. 12). c. ISD ≤ 26 A, d I/dt ≤ 480 A/μs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. LIMIT 600 ± 30 26 17 100 3.8 570 26 47 470 21 -55 to +150 300 10 1.1 UNIT W/°C m J A m J W V/ns °C...