IRFP26N60L Datasheet and Specifications PDF

IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 180 61 85 Single 0.21 D T.

* Superfast body diode eliminates the need for external diodes in ZVS applications Available
* Lower gate charge results in simpler drive Available requirements
* Enhanced dV/dt capabilities offer improved ruggedness
* Higher gate voltage threshold offers improved noise immunity
* Material cat.

SMPS MOSFET PD - 94611A IRFP26N60L HEXFET® Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS(on) typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterru.

and Benefits
* SuperFast body diode eliminates the need for external diodes in ZVS applications.
* Lower Gate charge results in simpler drive requirements.
* Enhanced dv/dt capabilities offer improved ruggedness. TO-247AC
* Higher Gate voltage threshold offers improved noise immunity . Absolute Maxi.

iscN-Channel MOSFET Transistor IRFP26N60L ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.25Ω (MAX) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum.

*Low drain-source on-resistance: RDS(ON) =0.25Ω (MAX)
*Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Switching Voltage Regulators
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) .