IRFP260
International Rectifier
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Power mosfet.
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IRFP260 - Standard Power MOSFET
(IXYS Corporation)
..
Standard Power MOSFET
N-Channel Enhancement Mode
IRFP 260 VDSS
ID (cont) RDS(on)
= 200 V = 46 A = 55 mΩ
Symbol VDSS VDGR VGS V.
IRFP260 - Power MOSFET
(Vishay Siliconix)
.vishay.
IRFP260
Vishay Siliconix
Power MOSFET
D TO-247AC
G
S
D G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)
200 VGS = 10 V.
IRFP260 - N-Channel MOSFET
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iscN-Channel MOSFET Transistor
IRFP260
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤55mΩ @VGS=10V ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS =.
IRFP260M - IR MOSFET
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Features Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralle.
IRFP260M - N-Channel MOSFET
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isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFP260M，IIRFP260M
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤40mΩ ·Enhancement mo.
IRFP260MPbF - IR MOSFET
(Infineon)
Features Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralle.
IRFP260MPBF - Power MOSFET
(International Rectifier)
PD - 96293
IRFP260MPbF
HEXFET® Power MOSFET
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l F.
IRFP260N - Power MOSFET
(International Rectifier)
PD - 95010A
IRFP260NPbF
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .
IRFP260N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFP260N，IIRFP260N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤40mΩ ·Enhancement mo.
IRFP260NPBF - HEXFET Power MOSFET
(International Rectifier)
PD - 95010A
IRFP260NPbF
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .
