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IRFP260 N-Channel MOSFET

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Description

iscN-Channel MOSFET Transistor IRFP260 *.

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Datasheet Specifications

Part number
IRFP260
Manufacturer
INCHANGE
File Size
394.45 KB
Datasheet
IRFP260-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* Low drain-source on-resistance: RDS(ON) ≤55mΩ @VGS=10V
* Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Switching Voltage Regulators
* ABS

Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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