www.DataSheet4U.com Standard Power MOSFET N-Chann.
IRFP260N - Power MOSFET
PD - 95010A IRFP260NPbF l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .IRFP260MPBF - Power MOSFET
PD - 96293 IRFP260MPbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l F.IRFP260N - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP260N,IIRFP260N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mo.IRFP260NPBF - HEXFET Power MOSFET
PD - 95010A IRFP260NPbF l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .IRFP260PBF - Power MOSFET
PD- 95915 IRFP260PbF Lead-Free www.DataSheet4U.com www.irf.com 1 9/27/04 IRFP260PbF www.DataSheet4U.com 2 www.irf.com IRFP260PbF www.Dat.IRFP260NPBF - N-Channel MOSFET
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·Ease of paralleling ·High speed switching ·Hard switched and high frequency circuits.IRFP260M - IR MOSFET
Features Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralle.IRFP260MPbF - IR MOSFET
Features Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralle.IRFP260 - Standard Power MOSFET
www.DataSheet4U.com Standard Power MOSFET N-Channel Enhancement Mode IRFP 260 VDSS ID (cont) RDS(on) = 200 V = 46 A = 55 mΩ Symbol VDSS VDGR VGS V.IRFP260 - Power MOSFET
www.vishay.com IRFP260 Vishay Siliconix Power MOSFET D TO-247AC G S D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 VGS = 10 V.AUIRFP2602 - Power MOSFET
AUTOMOTIVE GRADE Features l Advanced Process Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche All.IRFP260M - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP260M,IIRFP260M ·FEATURES ·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mo.IRFP260 - N-Channel MOSFET
iscN-Channel MOSFET Transistor IRFP260 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤55mΩ @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS =.AUIRFP2602 - Power MOSFET
AUTOMOTIVE GRADE Features • Advanced Process Technology • Low On-Resistance • 175°C Operating Temperature • Fast Switching • Repetitive Avalanche A.