AUIRFP2602 Datasheet | International Rectifier

Features l Advanced Process Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, Ro HS pliant l Automotive Qualified - Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. G G a te - 96420 AUIRFP2602 HEXFET® Power MOSFET V(BR)DSS 24V RDS(on) typ. 1.25mΩ max. 1.6mΩ j ID (Silicon Limited) 380A ID (Package Limited) 180A S GD TO-247AD D D rain S S o u rc e Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) ™Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Linear Derating Factor VGS EAS EAS (Tested ) IAR EAR TJ TSTG Gate-to-Source Voltage d Single Pulse Avalanche Energy (Thermally limited) h Single Pulse Avalanche Energy Tested Value ÙAvalanche Current g Repetitive Avalanche Energy Operating Junction and Storage...