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AUIRFP2602 - Power MOSFET

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced Process Technology.
  • Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •   V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) AUIRFP2602 24V 1.25mΩ 1.6mΩ 380A 180A.

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Datasheet Details

Part number AUIRFP2602
Manufacturer Infineon
File Size 734.06 KB
Description Power MOSFET
Datasheet download datasheet AUIRFP2602 Datasheet
Additional preview pages of the AUIRFP2602 datasheet.

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AUTOMOTIVE GRADE   Features • Advanced Process Technology • Low On-Resistance • 175°C Operating Temperature • Fast Switching • Repetitive Avalanche Allowed up to Tjmax • Lead-Free, RoHS Compliant • Automotive Qualified *   V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) AUIRFP2602 24V 1.25mΩ 1.6mΩ 380A 180A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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