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AUIRFP2602 - Power MOSFET

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • Advanced Process Technology.
  • Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •   V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) AUIRFP2602 24V 1.25mΩ 1.6mΩ 380A 180A.

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Full PDF Text Transcription for AUIRFP2602 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AUIRFP2602. For precise diagrams, and layout, please refer to the original PDF.

AUTOMOTIVE GRADE Features • Advanced Process Technology • Low On-Resistance • 175°C Operating Temperature • Fast Switching • Repetitive Avalanche Allowed up to Tjmax • Le...

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ature • Fast Switching • Repetitive Avalanche Allowed up to Tjmax • Lead-Free, RoHS Compliant • Automotive Qualified * V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) AUIRFP2602 24V 1.25mΩ 1.6mΩ 380A 180A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .

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