AUIRFP2602 Datasheet | Infineon

Features - Advanced Process Technology - Low On-Resistance - 175°C Operating Temperature - Fast Switching - Repetitive Avalanche Allowed up to Tjmax - Lead-Free, Ro HS pliant - Automotive Qualified -   V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 24V 1.25mΩ 1.6mΩ 380A 180A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. G Gate S GD TO-247AC AUIRFP2602 D Drain S Source Base part number AUIRFP2602 Package Type TO-247AC Standard Pack Form Quantity Tube Or...