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IRFP2907PbF Power MOSFET

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Description

IRFP2907PbF V(BR)DSS RDS(on) max.ID 75V 4.5m 209A Typical Applications * Telecom applications requiring soft start TO-247AC .
This Stripe Planar design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

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Features

* Advanced Process Technology
* Ultra Low On-Resistance
* Dynamic dv/dt Rating
* 175°C Operating Temperature
* Fast Switching
* Repetitive Avalanche Allowed up to Tjmax

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