Description
IRFP260NPbF V(BR)DSS RDS(on) max.ID 200V 0.04 50A .
Fifth Generation HEXFET Power MOSFETs utilizes advanced processing techniques to achieve extremely low onresistance per silicon area.
Features
* Advanced Process Technology
* Dynamic dv/dt Rating
* 175°C Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* Ease of Paralleling
* Simple Drive Requirements
Applications
* The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude th use of TO-220 devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Base part number IRFP260NPbF
Package Type TO-247AC
Stan
