IRFP2907ZPBF
International Rectifier
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Power mosfet. Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve ext
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IRFP2907Z - AUTOMOTIVE MOSFET
(International Rectifier)
..
PD - 95873
AUTOMOTIVE MOSFET
IRFP2907Z
HEXFET® Power MOSFET
D
Features
l l l l l
Advanced Process Technology Ultra Low On-Res.
IRFP2907Z - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRFP2907Z,IIRFP2907Z
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤4.5mΩ ·Enhancement mode: ·100% avalanche .
IRFP2907 - Power MOSFET
(International Rectifier)
PD -93906D
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IRFP2907 - N-Channel MOSFET
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isc N-Channel MOSFET Transistor
IRFP2907,IIRFP2907
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤4.5mΩ ·Enhancement mode: ·100% avalanche te.
IRFP2907B - HEXFET Power MOSFET
(International Rectifier)
..
PD - 93777
IRFC2907B
HEXFET®
l
Power MOSFET Die in Wafer Form
D
100% Tested at Probe l Available in Tape and Reel, Chip Pack, .
IRFP2907PBF - Power MOSFET
(International Rectifier)
Typical Applications l Tele applications requiring soft start
Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rati.
IRFP21N60L - Power MOSFET
(Vishay)
IRFP21N60L, SiHFP21N60L
Vishay Siliconix
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VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
600 VGS = .
IRFP21N60L - N-Channel MOSFET
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iscN-Channel MOSFET Transistor
IRFP21N60L
·FEATURES ·Low drain-source on-resistance:
RDS(ON) =0.32Ω (MAX) ·Enhancement mode:
Vth = 3.0 to 5.0V (VDS .
IRFP22N50A - Power MOSFET
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IRFP22N50A, SiHFP22N50A
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VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 1.
IRFP22N50A - SMPS MOSFET
(International Rectifier)
PD- 91833C
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IRFP22N50A
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Applications l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply l High Speed P.