IRFP2907 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRFP2907,IIRFP2907
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤4.5mΩ ·Enhancement mode: ·100% avalanche te.
IRFP2907B - HEXFET Power MOSFET
(International Rectifier)
..
PD - 93777
IRFC2907B
HEXFET®
l
Power MOSFET Die in Wafer Form
D
100% Tested at Probe l Available in Tape and Reel, Chip Pack, .
IRFP2907PBF - Power MOSFET
(International Rectifier)
Typical Applications l Tele applications requiring soft start
Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rati.
IRFP2907PbF - Power MOSFET
(Infineon)
IRFP2907PbF
V(BR)DSS RDS(on) max. ID
75V 4.5m 209A
Typical Applications • Tele applications requiring soft start
TO-247AC
Features • Advance.
IRFP2907Z - AUTOMOTIVE MOSFET
(International Rectifier)
..
PD - 95873
AUTOMOTIVE MOSFET
IRFP2907Z
HEXFET® Power MOSFET
D
Features
l l l l l
Advanced Process Technology Ultra Low On-Res.
IRFP2907Z - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRFP2907Z,IIRFP2907Z
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤4.5mΩ ·Enhancement mode: ·100% avalanche .
IRFP2907ZPBF - Power MOSFET
(International Rectifier)
AUTOMOTIVE MOSFET
PD - 95480
IRFP2907ZPbF
Features
l l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast.
IRFP21N60L - Power MOSFET
(Vishay)
IRFP21N60L, SiHFP21N60L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
600 VGS = .