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IRFP2907B

HEXFET Power MOSFET

IRFP2907B General Description

Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Leakage Current Operating Junction and Storage Temperature Range G S 75V RDS(on) = 2.5mΩ (typ.)∗∗∗ 6" Wafer Test Conditions VGS = 0V, ID = 250µA VGS = 10V, I.

IRFP2907B Datasheet (47.00 KB)

Preview of IRFP2907B PDF

Datasheet Details

Part number:

IRFP2907B

Manufacturer:

International Rectifier

File Size:

47.00 KB

Description:

Hexfet power mosfet.
www.DataSheet4U.com PD - 93777 IRFC2907B HEXFET® l Power MOSFET Die in Wafer Form D 100% Tested at Probe l Available in Tape and Reel, Chip Pack, .

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IRFP2907B HEXFET Power MOSFET International Rectifier

IRFP2907B Distributor