IRFP2907Z Datasheet, Mosfet, International Rectifier

IRFP2907Z Features

• Mosfet l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 75V RDS(on) = 4.5mΩ‰ G S Des

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IRFP2907Z

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International Rectifier

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📄 Datasheet

Description:

Automotive mosfet. Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve ext

IRFP2907Z Application

• Applications this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additiona

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IRFP2907Z

International Rectifier

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