IXDN55N120 Datasheet - IXYS Corporation

IXDN55N120 High Voltage IGBT with optional Diode

High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA IXDN 55N120 VCES = 1200 V = 100 A IXDN 55N120 D1 IC25 VCE(sat) typ = 2.3 V C G G C miniBLOC, SOT-227 B E153432 G E E IXDN 55N120 E IXDN 55N120 D1 C E = Emitter x, G = Gate, C = Collector E = Emitter x E Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC VISOL TJ Tstg Md Weight Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp = 1 m.

IXDN55N120 Features

* q q q q q q 50/60 Hz; IISOL £ 1 mA q q q NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard pac

IXDN55N120_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXDN55N120

Manufacturer:

IXYS Corporation

File Size:

72.78 KB

Description:

High voltage igbt with optional diode.

IXDN55N120 Distributor

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IXDN55N120 IXDN55N120 High Voltage IGBT with optional Diode IXYS Corporation