IXDN55N120 High Voltage IGBT with optional Diode

IXYS Corporation

Description

High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA IXDN 55N120 VCES = 1200 V = 100 A IXDN 55N120 D1 IC25 VCE(sat) typ = .

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Datasheet Specifications

Part number: IXDN55N120
Manufacturer: IXYS Corporation
File Size: 72.78 KB
Datasheet: IXDN55N120_IXYSCorporation.pdf
Description: High Voltage IGBT with optional Diode

Features

* q q q q q q 50/60 Hz; IISOL £ 1 mA q q q NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard pac

Applications

* q q q q V(BR)CES VGE(th) ICES IGES VCE(sat) VGE = 0 V IC = 2 mA, VCE = VGE VCE = VCES q 3.8 mA mA ± 500 nA AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies VCE = 0 V, VGE = ± 20 V IC = 55 A, VGE = 15 V

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IXDN55N120 High Voltage IGBT with optional Diode IXYS Corporation

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