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IXDN55N120D1

High Voltage IGBT

IXDN55N120D1 Features

* NPT IGBT technology

* low saturation voltage

* low switching losses

* square RBSOA, no latch up

* high short circuit capability

* positive temperature coefficient for easy paralleling

* MOS input, voltage controlled

* optional ultra fast diode

* International st

IXDN55N120D1 Datasheet (73.96 KB)

Preview of IXDN55N120D1 PDF

Datasheet Details

Part number:

IXDN55N120D1

Manufacturer:

IXYS

File Size:

73.96 KB

Description:

High voltage igbt.
IXDN 55N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA VCES = 1200 V IC25 = 100 A V =CE(sat) typ 2.3 V C mi.

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IXDN55N120D1 High Voltage IGBT IXYS

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