IXDN55N120D1 Datasheet - IXYS

IXDN55N120D1 - High Voltage IGBT

IXDN 55N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA VCES = 1200 V IC25 = 100 A V =CE(sat) typ 2.3 V C miniBLOC, SOT-227 B E153432 E GG Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC VISOL TJ Tstg Md Weight Symbol V(BR)CES VGE(th) I CES I GES VCE(sat) E Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp = 1 ms VGE = ±15 V, TJ = 125°C, RG = 22 Ω Clamped inductive l.

IXDN55N120D1 Features

* NPT IGBT technology

* low saturation voltage

* low switching losses

* square RBSOA, no latch up

* high short circuit capability

* positive temperature coefficient for easy paralleling

* MOS input, voltage controlled

* optional ultra fast diode

* International st

IXDN55N120D1-IXYS.pdf