IXDN75N120 Datasheet - IXYS Corporation

IXDN75N120 High Voltage IGBT

www.DataSheet4U.com High Voltage IGBT IXDN 75N120 VCES = 1200 V = 150 A IC25 VCE(sat) typ = 2.2 V Short Circuit SOA Capability Square RBSOA C G miniBLOC, SOT-227 B E153432 G E E E E C Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC VISOL TJ Tstg Md Weight Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp = 1 ms VGE = ±15 V, TJ = 125°C, RG = 15 W Clamped inductive load, L = 30 µH VGE = ±15 V, VCE = VCES, TJ.

IXDN75N120 Features

* q q q q q q q q 50/60 Hz; IISOL £ 1 mA NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled International standard package miniBLOC Advantages q

IXDN75N120_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXDN75N120

Manufacturer:

IXYS Corporation

File Size:

106.84 KB

Description:

High voltage igbt.

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