IXTH3N120 Datasheet, mosfet equivalent, IXYS Corporation

IXTH3N120 Features and benefits

IXTH3N120 Application

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IXTH3N100P - MOSFET (IXYS)
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA3N100P IXTP3N100P IXTH3N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD.

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.5mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.

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Preliminary Data Sheet MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTH 30N45 450 V IXTH 30N50 500 V ID25 RDS(on) 30 A 0.16 Ω 30 A 0.17 Ω TO-247.

IXTH30N50 - Power MOSFET (IXYS Corporation)
MegaMOSTMFET N-Channel Enhancement Mode IXTH 30N50 VDSS = 500 V ID (cont) = 30 A RDS(on) = 0.17 Ω Symbol V DSS V DGR V GS VGSM ID25 I DM PD TJ T.

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTH30N50L ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Low switching .

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 200mΩ(Max) ·Fast Sw.

IXTH30N50P - PolarHV Power MOSFET (IXYS)
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS V= DSS ID25 = ≤ RDS(o.

IXTH30N60L2 - Power MOSFET (IXYS)
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IXTH30N60P - PolarHV Power MOSFET (IXYS)
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS VDSS = 600 V ID25 = 3.

IXTH32N65X - Power MOSFET (IXYS)
Preliminary Technical Information X-Class Power MOSFET N-Channel Enhancement Mode IXTP32N65X IXTQ32N65X IXTH32N65X VDSS = ID25 = RDS(on) 650V 32A.