IXTH3N120 Datasheet (IXYS Corporation)

IXTH3N120, Power MOSFET

High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA3N120 IXTP3N120 IXTH3N120 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1200 V 1200 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 3 12 3 700 5 200 -55 +150 150 -55 +150

IXTH3N120 Features

* International Standard Packages

* High Voltage Package

* Fast Intrinsic Diode

* Avalanche Rated

* Molding Epoxies meet UL 94 V-0 Flammability Classification

* High Blocking Voltage Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications