Overview: High Voltage Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA3N120 IXTP3N120 IXTH3N120 Symbol
VDSS VDGR VGSS VGSM ID25 IDM
IA EAS
dv/dt
PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1200 V 1200 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C
IS IDM, VDD VDSS, TJ 150C TC = 25C 3 12
3 700
5 200 -55 ... +150 150 -55 ... +150 A A A mJ
V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-247 & TO-220) 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 TO-247 2.5 g 3.0 g 6.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 1200 V VGS(th) VDS = VGS, ID = 250A 2.5 5.0 V IGSS VGS = 20V, VDS = 0V 100 nA IDSS VDS = VDSS, VGS = 0V TJ = 125C 25 A 1 mA RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 4.5 VDSS =
ID25 = RDS(on) 1200V 3A 4.
