100N10 Datasheet - IXYS

100N10 Power MOSFETs

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK100N10 IXFN150N10 V I DSS D25 100 V 100 A 100 V 150 A trr £ 200 ns R DS(on) 12 mW 12 mW TO-264 AA (IXFK) Symbol VDSS VDGR VGS VGSM ID25 ID120 I DM I AR EAR dv/dt PD T J T JM Tstg TL VISOL Md Weight Symbol V DSS VGH(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 120°C, limited by external leads T C = 25°C, pul.

100N10 Features

* q International standard packages q JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification q miniBLOC with Aluminium nitride isolation q Low R HDMOSTM process DS (on) q Rugged polysilicon gate cell structure q Unclamped Inductive Switching (UIS) rated q Low package inductance q Fast intr

100N10 Datasheet (114.11 KB)