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180N10 Power MOSFETs

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Description

HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) Single MOSFET Die IXFR 180N10 VDSS = 100 V ID25 = 165 A RDS(on) = 8 mW tr.

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Datasheet Specifications

Part number
180N10
Manufacturer
IXYS
File Size
31.85 KB
Datasheet
180N10-IXYS.pdf
Description
Power MOSFETs

Features

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* Low drain to tab capacitance(

Applications

* DC-DC converters
* Battery chargers
* Switched-mode and resonant-mode power supplies
* DC choppers
* AC motor control Advantages
* Easy assembly
* Space savings
* High power density IXYS reserves the right to change limits, test cond

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📁 Related Datasheet

180N10B 180N10F3 180N10N 180N55F3 180NQ 180NQ035

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180N10 Power MOSFETs IXYS
IXYS 180N10-like datasheet