180N10 Datasheet (IXYS) - Power MOSFETs

180N10, Power MOSFETs

HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) Single MOSFET Die IXFR 180N10 VDSS = 100 V ID25 = 165 A RDS(on) = 8 mW trr £ 250 ns Preliminary data Symbol VDSS V DGR VGS V GSM I D25 ID(RMS) I DM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Symbol V DSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MW Continuous Transient T C = 25°C (MOSFET chip capability) External lead (current limit) T C = 25°C, N

180N10 Features

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation

* Low drain to tab capacitance(