Part number:
180N10
Manufacturer:
IXYS
File Size:
31.85 KB
Description:
Power mosfets.
HiPerFETTM Power MOSFETs ISOPLUS247TM
(Electrically Isolated Back Surface)
Single MOSFET Die
IXFR 180N10
VDSS = 100 V ID25 = 165 A RDS(on) = 8 mW
tr.
* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* Low drain to tab capacitance(
180N10
IXYS
31.85 KB
Power mosfets.
HiPerFETTM Power MOSFETs ISOPLUS247TM
(Electrically Isolated Back Surface)
Single MOSFET Die
IXFR 180N10
VDSS = 100 V ID25 = 165 A RDS(on) = 8 mW
tr.
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