180N10 Datasheet - IXYS

180N10 Power MOSFETs

HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) Single MOSFET Die IXFR 180N10 VDSS = 100 V ID25 = 165 A RDS(on) = 8 mW trr £ 250 ns Preliminary data Symbol VDSS V DGR VGS V GSM I D25 ID(RMS) I DM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Symbol V DSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MW Continuous Transient T C = 25°C (MOSFET chip capability) External lead (current limit) T C = 25°C, N.

180N10 Features

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation

* Low drain to tab capacitance(

180N10 Datasheet (31.85 KB)

180N10 Datasheet Preview — Preview of 180N10 PDF

Datasheet Details

Part number:

180N10

Manufacturer:

IXYS

File Size:

31.85 KB

Description:

Power mosfets.

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180N10 Power MOSFETs IXYS

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