180N10B - Power MOSFET

ON Semiconductor

Datasheet Details

Ultra Low On-Resistance.
Low Gate Charge.
High Speed Switching.
100% Avalanche Test.
Pb-Free and RoHS compliance Specifications Absolute Maximum Ratings at Ta = 25C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (DC) Limited by Package Drain Current (Pulse) PW10s, duty cycle1% Power Dissipation Tc=25C Junction Temperature VDSS VGSS ID IDL IDP PD Tj 100 V 20 V 180 A 100 A 600 A 2.1 200 W.

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Published: Oct 13, 2018 |