CPC5603 Datasheet (IXYS)

CPC5603, N-Channel FET

The CPC5603 is an N-channel, depletion mode Field Effect Transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process.

The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.

CPC5603 Features

* 415V Drain-to-Source Voltage

* Depletion Mode Device Offers Low RDS(on) at Cold Temperatures

* Low On-Resistance: 8 (Typical) @ 25°C

* Low VGS(off) Voltage: -2.0V to -3.6V

* High Input Impedance

* Low Input and Output Leakage

* Small Package