FII30-06D Datasheet - IXYS

FII30-06D IGBT phaseleg

IGBT phaseleg in ISOPLUS i4-PAC™ FII 30-06D IC25 = 30 A VCES = 600 V VCE(sat) typ. = 1.9 V 3 5 4 1 E72873 2 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = ±15 V; RG = 47 Ω; TVJ = 125°C RBSOA Clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 47 Ω TVJ = 125°C; non-repetitive TC = 25°C Maximum Ratings 600 V ± 20 V 30 18 40 VCES 10 A A A µs 100 W Symbol VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf .

FII30-06D Features

* NPT IGBT technology - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching

* HiPerFRED™ diode - optimized fast and soft reverse recovery - low operating forward voltage - low leakage current

* ISOPLUS i4-PAC™ packa

FII30-06D-IXYS.pdf