FII50-12E Datasheet - IXYS

FII50-12E IGBT phaseleg

NPT3 IGBT phaseleg in ISOPLUS i4-PACTM FII 50-12E IC25 = 50 A VCES = 1200 V VCE(sat) typ. = 2.0 V 3 5 4 1 1 5 2 IGBTs Symbol VCES VGES IC25 IC90 ICM VCEK t SC (SCSOA) Ptot Symbol VCE(sat) V GE(th) ICES IGES t d(on) tr td(off) tf Eon Eoff Cies QGon R thJC RthJH Conditions Maximum Ratings TVJ = 25°C to 150°C 1200 ± 20 V V TC = 25°C TC = 90°C VGE = ±15 V; RG = 39 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH V CE = 900V; VGE = ±15 V; R G = 39 Ω; TVJ = 125°C non-re.

FII50-12E Features

* NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits

* HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current

FII50-12E-IXYS.pdf