* z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V~ Electrical Isolation z Avalanche Rated z Low QG z Low Drain-to-Tab Capacitance z Low Package Inductance Advantages z Low Gate Drive Requirement z High Power Density z Low Drain to Ground
FMP26-02P Datasheet (102.24 KB)
FMP26-02P
IXYS
102.24 KB
P & n-channel power mosfet.
Preliminary Technical Information
PolarTM P & N-Channel Power MOSFET Common Drain Topology
(Electrically Isolated Tab)
FMP26-02P
43
T1
5 34
T2
11 22.
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