FMP26-02P - P & N-Channel Power MOSFET
Preliminary Technical Information PolarTM P & N-Channel Power MOSFET Common Drain Topology (Electrically Isolated Tab) FMP26-02P 43 T1 5 34 T2 11 22 VDSS ID25 RDS(on) trr(typ) P CH.
- 200V - 17A 170mΩ 240ns N CH.
200V 26A 60mΩ 150ns Symbol TJ TJM Tstg VISOLD TL TSOLD FC Test Conditions Maximum Ratings -55 +150 °C 150 °C -55 +150 °C 50/60HZ, RMS, t = 1min, Leads-to-Tab 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 2500 ~V 300 °C 260 °C Mounting Force 20..120 /
FMP26-02P Features
* z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V~ Electrical Isolation z Avalanche Rated z Low QG z Low Drain-to-Tab Capacitance z Low Package Inductance Advantages z Low Gate Drive Requirement z High Power Density z Low Drain to Ground
