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FMP26-02P P & N-Channel Power MOSFET

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Description

Preliminary Technical Information PolarTM P & N-Channel Power MOSFET Common Drain Topology (Electrically Isolated Tab) FMP26-02P 43 T1 5 34 T2 11 22.

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Datasheet Specifications

Part number
FMP26-02P
Manufacturer
IXYS
File Size
102.24 KB
Datasheet
FMP26-02P-IXYS.pdf
Description
P & N-Channel Power MOSFET

Features

* z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V~ Electrical Isolation z Avalanche Rated z Low QG z Low Drain-to-Tab Capacitance z Low Package Inductance Advantages z Low Gate Drive Requirement z High Power Density z Low Drain to Ground

Applications

* z DC and AC Motor Drives z Class AB Audio Amplifiers z Multi-Phase DC to DC Converters z Industrial Battery Chargers z Switching Power Supplies © 2011 IXYS CORPORATION, All Rights Reserved DS100033A(04/11) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 25

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