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FMP20N60S1 - N-CHANNEL SILICON POWER MOSFET

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FMP20N60S1 Product details

Description

Drain-Source Voltage Symbol VDS VDSX Continuous Drain Current ID Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt IDP VGS IAR EAS dVDS/dt dV/dt -di/dt Maximum Power Dissipation PD Operating and Storage Temperature range Tch Tstg Note 1 : Limited by maximum channel temperature. 2 : Tch≤150°C, See Fig.1 and

Features

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