* / Advantages:
* Easy paralleling due to the positive temperature coefficient of the on-state voltage
* Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic
* Thin wafer technology combined wi
IXA55I1200HJ Datasheet (108.36 KB)
IXA55I1200HJ
IXYS
108.36 KB
Xpt igbt.
XPT IGBT Single IGBT Part number IXA55I1200HJ IXA55I1200HJ VCES I C25 VCE(sat) = = = preliminary 1200 V 84 A 1.8 V (G) 1 (C) 2 (E) 3 Backside: .
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