* / Advantages:
* Easy paralleling due to the positive temperature coefficient of the on-state voltage
* Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic
* Thin wafer technology combined wi
IXA17IF1200HJ Datasheet (175.17 KB)
IXA17IF1200HJ
IXYS
175.17 KB
Xpt igbt.
XPT IGBT Copack Part number IXA17IF1200HJ IXA17IF1200HJ VCES = I C25 = V = CE(sat) 1200 V 28 A 1.8 V (G) 1 2 (C) 3 (E) Backside: isolated Fe.
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