* / Advantages:
* Easy paralleling due to the positive temperature coefficient of the on-state voltage
* Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic
* Thin wafer technology combined wi
IXA20I1200PB Datasheet (135.89 KB)
IXA20I1200PB
IXYS
135.89 KB
Xpt igbt.
IXA20I1200PB preliminary XPT IGBT Single IGBT (C) 2 I C25 = = VCES VCE(sat)typ = 33 A 1200 V 1.8 V Part number IXA20I1200PB (G) 1 (E) 3 Featur.
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