IXFP20N50P3M Datasheet (IXYS)

IXFP20N50P3M, Power MOSFET

Preliminary Technical Information Polar3TM HiperFETTM Power MOSFET IXFP20N50P3M VDSS = ID25 = RDS(on)  500V 8A 300m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature fo

IXFP20N50P3M Features

* Plastic Overmolded Tab for Electrical Isolation

* Fast Intrinsic Rectifier

* Avalanche Rated

* Low RDS(ON) and QG

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies