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IXFP05N100M High Voltage HiperFET

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Description

Preliminary Technical Information High Voltage HiperFET (Electrically Isolated Tab) IXFP05N100M RDS(on) trr VDSS ID25 = 1000V = 700mA ≤ 17Ω ≤ 300.

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Datasheet Specifications

Part number
IXFP05N100M
Manufacturer
IXYS Corporation
File Size
129.04 KB
Datasheet
IXFP05N100M_IXYSCorporation.pdf
Description
High Voltage HiperFET

Features

* Plastic overmolded tab for electrical isolation International standard package Avalanche rated Low package inductance Advantages Easy to mount Space savings High power density V 4.5 V G Isolated Tab D S D = Drain G = Gate S = Source 1.6 mm (0.062 in. ) from case for 10 s Plastic body for 10 s Mount

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