IXFP12N50PM Datasheet - IXYS Corporation

IXFP12N50PM Power MOSFET

PolarTM Power MOSFET HiPerFETTM (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFP12N50PM VDSS ID25 trr RDS(on) = 500V = 6A ≤ 500mΩ ≤ 300ns OVERMOLDED TO-220 (IXFPM) OUTLINE Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ .

IXFP12N50PM Features

* Plastic overmolded tab for electrical isolation International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect G Isolated Tab D S D = Drain G = Gate S = Source 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torqu

IXFP12N50PM_IXYSCorporation.pdf