IXFP130N10T Datasheet - IXYS Corporation

IXFP130N10T Power MOSFET

Preliminary Technical Information TrenchTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode IXFA130N10T IXFP130N10T Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 100 V 100 V  20 V  30 V TC = 25C Lead Current Limit, RMS TC = 25C, Pulse Width Limited by TJM 130 A 120 A 350 A TC = 25C TC = 25C .

IXFP130N10T Features

* Ultra-Low On Resistance

* Avalanche Rated

* Low Package Inductance - Easy to Drive and to Protect

* 175C Operating Temperature

* Fast Intrinsic Diode Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* Automotive - Motor Drives -

IXFP130N10T Datasheet (283.89 KB)

IXFP130N10T Datasheet Preview — Preview of IXFP130N10T PDF

Datasheet Details

Part number:

IXFP130N10T

Manufacturer:

IXYS Corporation

File Size:

283.89 KB

Description:

Power mosfet.

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IXFP130N10T Power MOSFET IXYS Corporation

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