IXFP110N15T2 Datasheet - IXYS Corporation

IXFP110N15T2 - Power MOSFET

Preliminary Technical Information TrenchT2TM HiperFET Power MOSFET IXFA110N15T2 IXFP110N15T2 VDSS = ID25 = RDS(on)  150V 110A 13m N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 150 V 150 V  20 V  30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS,TJ  .

IXFP110N15T2 Features

* International standard packages

* 175°C Operating Temperature

* High current handling capability

* Fast intrinsic Rectifier

* Dynamic dV/dt rated

* Low RDS(on) Advantages

* Easy to mount

* Space savings

* High power density Applications

* DC-DC converters

IXFP110N15T2_IXYSCorporation.pdf