IXFP12N50P Datasheet - IXYS Corporation

IXFP12N50P Polar MOSFETs

Advance Technical Information IXFA 12N50P IXFP 12N50P PolarHVTM Power www.DataSheet4U.com MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA 12N50P IXFP 12N50P VDSS ID25 RDS(on) trr = 500 = 12 ≤ 0.5 ≤ 200 V A Ω ns Symbol VDSS VDGR VGSM VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Transient Continuous TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs.

IXFP12N50P Features

* z z 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque TO-220 TO-263 (TO-220) 300 260 1.13/10 Nm/lb.in. 4 3 g g z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Symbol Tes

IXFP12N50P_IXYSCorporation.pdf