Datasheet Details
- Part number
- IXFP130N10T2
- Manufacturer
- INCHANGE
- File Size
- 246.81 KB
- Datasheet
- IXFP130N10T2-INCHANGE.pdf
- Description
- N-Channel MOSFET
IXFP130N10T2 Description
isc N-Channel MOSFET Transistor IXFP130N10T2 *.
IXFP130N10T2 Features
* Static drain-source on-resistance:
RDS(on) ≤ 9.1mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
IXFP130N10T2 Applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
130
IDM
Drain Current-Single Pulsed
300
PD
Total Dissipation @TC=25℃
360
Tj
Operating Junction Temperature
-55~175
Tstg
Storage T
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