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IXHH40N150HV 1500V MOS Gated Thyristor

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Description

Preliminary Technical Information 1500V MOS Gated Thyristor IXHH40N150HV VDM A = 1500V G K TO-247HV Symbol VDM VGK VGK ITSM PD TJ TJM Tstg TL .

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Datasheet Specifications

Part number
IXHH40N150HV
Manufacturer
IXYS
File Size
196.16 KB
Datasheet
IXHH40N150HV-IXYS.pdf
Description
1500V MOS Gated Thyristor

Features

* Very High Voltage Package
* Very High Current Capability Advantages
* High Power Density

Applications

* Capacitive Discharge Circuits
* Ignition Circuits
* Solid State Surge Protection © 2014 IXYS CORPORATION, All Rights Reserved DS100611A(6/14) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Ciks Coks Crks VAK = 25V, VGK = 0V, f = 1MHz Qg(on) Qgk Qga IC = 40A, VGK =

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