IXHX40N150V1HV Datasheet - IXYS

IXHX40N150V1HV 1500V MOS Gated Thyristor

Preliminary Technical Information 1500V MOS Gated IXHX40N150V1HV VDM Thyristor A w/ Anti-Parallel Diode = 1500V G K Symbol VDM VGK VGK ITSM PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C Continuous Transient Maximum Ratings 1500 V ±30 V ±40 V TC = 25°C, 1μs TC = 25°C, 10μs TC = 25°C 7.6 kA 3.5 kA 695 W -55 +150 °C 150 °C -55 +150 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s 300 °C 260 °C Mounting Force 20..1.

IXHX40N150V1HV Features

* Very High Voltage Package

* Anti-Parallel Diode

* Very High Current Capability Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VBR IA = 250A, VGK = 0V VGK(th) IA = 250μA, VAK = VGK VT IT = 1000A, VGK = 15V rT IT > IL, VGK = 15V VBO VGK = 15V ID VAK = 1500

IXHX40N150V1HV Datasheet (195.34 KB)