IXHX40N150V1HV - 1500V MOS Gated Thyristor

IXYS

Datasheet Details

Very High Voltage Package.
Anti-Parallel Diode.
Very High Current Capability Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VBR IA = 250A, VGK = 0V VGK(th) IA = 250μA, VAK = VGK VT IT = 1000A, VGK = 15V rT IT > IL, VGK = 15V VBO VGK = 15V ID VAK = 1500V, VGK = 0V IL IH IGKS VAK = 0V, VGK = 30V TJ = 125C Characteristic Values Min. Typ. Max. 1500 V 2.5 5.0 V 5.95 7.5 V 1.20 m 6.45 V 15 A 1.5 mA 250 A 200 A 200 n.

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Published: Mar 24, 2025 |