IXHX40N150V1HV 1500V MOS Gated Thyristor

IXYS

Description

Preliminary Technical Information 1500V MOS Gated IXHX40N150V1HV VDM Thyristor A w/ Anti-Parallel Diode = 1500V G K Symbol VDM VGK VGK ITSM PD TJ T.

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Datasheet Specifications

Part number: IXHX40N150V1HV
Manufacturer: IXYS
File Size: 195.34 KB
Datasheet: IXHX40N150V1HV-IXYS.pdf
Description: 1500V MOS Gated Thyristor

Features

* Very High Voltage Package
* Anti-Parallel Diode
* Very High Current Capability Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VBR IA = 250A, VGK = 0V VGK(th) IA = 250μA, VAK = VGK VT IT = 1000A, VGK = 15V rT IT > IL, VGK = 15V VBO VGK = 15V ID VAK = 1500

Applications

* Capacitive Discharge Circuits
* Ignition Circuits
* Solid State Surge Protection © 2014 IXYS CORPORATION, All Rights Reserved DS100610A(6/14) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Ciks Coks Crks VAK = 25V, VGK = 0V, f = 1MHz Qg(on) Qgk Qga tri td IC = 40A

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IXHX40N150V1HV 1500V MOS Gated Thyristor IXYS

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