* Very High Voltage Package
* Anti-Parallel Diode
* Very High Current Capability Symbol Test Conditions (TJ = 25ï°C, Unless Otherwise Specified) VBR IA = 250ïA, VGK = 0V VGK(th) IA = 250ΞA, VAK = VGK VT IT = 1000A, VGK = 15V rT IT > IL, VGK = 15V VBO VGK = 15V ID VAK = 1500
IXHX40N150V1HV Datasheet (195.34 KB)
IXHX40N150V1HV
IXYS
195.34 KB
1500v mos gated thyristor.
Preliminary Technical Information 1500V MOS Gated IXHX40N150V1HV VDM Thyristor A w/ Anti-Parallel Diode = 1500V G K Symbol VDM VGK VGK ITSM PD TJ T.
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Toshiba America Electronic Components
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