Datasheet Details
Part number:
IXTP2R4N50P, IXTY2R4N50P
Manufacturer:
IXYS
File Size:
254.07 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXTP2R4N50P, IXTY2R4N50P.
Please refer to the document for exact specifications by model.
IXTP2R4N50P, IXTY2R4N50P, Power MOSFET
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY2R4N50P IXTP2R4N50P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-220 Maximum Rating
IXTP2R4N50P Features
* International Standard Packages
* Low Q G
* Avalanche Rated
* Low Package Inductance
* Fast Intrinsic Rectifier Advantages
* High Power Density
* Easy to Mount
* Space Savings Applications
* DC-DC Converters
* Switch-Mode and Resonant-Mode Power Supplie
📁 Related Datasheet
📌 All Tags
