Datasheet Details
- Part number
- IXTP270N04T4
- Manufacturer
- INCHANGE
- File Size
- 246.56 KB
- Datasheet
- IXTP270N04T4-INCHANGE.pdf
- Description
- N-Channel MOSFET
IXTP270N04T4 Description
isc N-Channel MOSFET Transistor IXTP270N04T4 *.
IXTP270N04T4 Features
* Static drain-source on-resistance:
RDS(on) ≤ 2.4mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
IXTP270N04T4 Applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
40
VGS
Gate-Source Voltage
±15
ID
Drain Current-Continuous
270
IDM
Drain Current-Single Pulsed
800
PD
Total Dissipation @TC=25℃
375
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Te
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