MDD1080-28N7
IXYS
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Diode modules.
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MDD1080-24N7 - Diode Modules
(IXYS)
IXYS
Date: 13th Mar 2013 Data Sheet Issue: 1
Diode Modules MD#1080
Absolute Maximum Ratings
VRRM VDRM
[V]
1800 2400 2800
1080-18N7 1080-24N7 1080.
MDD1080-18N7 - Diode Modules
(IXYS)
IXYS
Date: 13th Mar 2013 Data Sheet Issue: 1
Diode Modules MD#1080
Absolute Maximum Ratings
VRRM VDRM
[V]
1800 2400 2800
1080-18N7 1080-24N7 1080.
MDD1051 - Single N-channel MOSFET
(MagnaChip)
MDD1051 – Single N-Channel Trench MOSFET 150V
MDD1051
Single N-channel Trench MOSFET 150V, 28A, 46mΩ
ㄹ
General Description
The MDD1051 uses advanced.
MDD1051RH - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
MDD1051RH
·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low ga.
MDD10N074RH - N-channel MOSFET
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Magnachip Power Technology
MDD10N074RH
MDD10N074RH
Single N-channel Trench MOSFET 100V 7.8mΩ 60A
FEATURES • Trench power MOSFET technology • Very lo.
MDD142-08N1 - Standard Rectifier
(IXYS)
Standard Rectifier Module
Phase leg
Part number
MDD142-08N1
2 13
MDD142-08N1
VRRM I FAV VF
= 2x 800 V = 165 A = 1.05 V
Backside: isolated
Feature.
MDD142-12N1 - Standard Rectifier
(IXYS)
Standard Rectifier Module
Phase leg
Part number
MDD142-12N1
2 13
MDD142-12N1
VRRM I FAV VF
= 2x 1200 V = 165 A = 1.05 V
Backside: isolated
Featur.
MDD142-14N1 - Standard Rectifier
(IXYS)
Standard Rectifier Module
Phase leg
Part number
MDD142-14N1
2 13
MDD142-14N1
VRRM I FAV VF
= 2x 1400 V = 165 A = 1.05 V
Backside: isolated
Featur.
MDD142-16N1 - Standard Rectifier
(IXYS)
Standard Rectifier Module
Phase leg
Part number
MDD142-16N1
2 13
MDD142-16N1
VRRM I FAV VF
= 2x 1600 V = 165 A = 1.05 V
Backside: isolated
Featur.
MDD142-18N1 - Standard Rectifier
(IXYS)
Standard Rectifier Module
Phase leg
Part number
MDD142-18N1
2 13
MDD142-18N1
VRRM I FAV VF
= 2x 1800 V = 165 A = 1.05 V
Backside: isolated
Featur.
