* Easy paralleling due to the positive temperature coefficient of the on-state voltage
* Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EMI
* Thin wafer technology
MIXA61H1200ED Datasheet (151.44 KB)
MIXA61H1200ED
IXYS
151.44 KB
Xpt igbt.
IGBT XPT Module H Bridge Preliminary data Part name (Marking on product) MIXA 61H1200ED MIXA 61H1200ED VCES = 1200 V IC25 = 85 A VCE(sat) = 1.8 V.
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