* / Advantages:
* High level of integration
* Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic
* Thin wafer technology combined with the XPT design results in a competitive low VCE(sat)
MIXA100PM650TMI Datasheet (131.85 KB)
MIXA100PM650TMI
IXYS
131.85 KB
Xpt igbt.
XPT IGBT Module
Phase leg with Multi Level
Part number
MIXA100PM650TMI
MIXA100PM650TMI
tentative
VCES I C25 VCE(sat)
= 2x = =
650 V 150 A 1.6 V
.
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