MIXA100PM650TMI - XPT IGBT

Datasheet Summary

Features

/ Advantages:.
High level of integration.
Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic.
Thin wafer technology combined with the XPT design results in a competitive low VCE(sat).
Temperature sense included.
SONIC™ diode - fast and soft reverse recovery - low operating forward voltage.

IXYS

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Datasheet Details

Part number	MIXA100PM650TMI
Manufacturer	IXYS
File Size	131.85 KB
Description	XPT IGBT
Datasheet	MIXA100PM650TMI Datasheet
Additional preview pages of the MIXA100PM650TMI datasheet.

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Full PDF Text Transcription

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XPT IGBT Module Phase leg with Multi Level Part number MIXA100PM650TMI MIXA100PM650TMI tentative VCES I C25 VCE(sat) = 2x = = 650 V 150 A 1.6 V Th1 E4 G4 E3 G3 N E2 G2 E1 G1 Th2 U Features / Advantages: ● High level of integration ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec.

Published: Aug 22, 2016 |