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MIXA10WB1200TED - IGBT

Datasheet Summary

Features

  • Easy paralleling due to the positive temperature coefficient of the on-state voltage.
  • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI.
  • Thin wafer technology combined with the XPT design results in a competitive low VCE(sat).
  • SONIC™ diode - fast and soft reverse recovery - low operating forward voltage.

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Datasheet Details

Part number MIXA10WB1200TED
Manufacturer IXYS
File Size 218.50 KB
Description IGBT
Datasheet download datasheet MIXA10WB1200TED Datasheet
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Full PDF Text Transcription

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Converter - Brake - Inverter Module XPT IGBT Preliminary data Part name (Marking on product) MIXA10WB1200TED MIXA10WB1200TED Three Phase Rectifier Brake Three Phase Chopper Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM = 105 A IC25 = 17 A IC25 = 17 A IFSM = 320 A VCE(sat) = 1.8 V VCE(sat) = 1.8 V 21 22 D11 D13 D15 7 1 2 3 D7 16 15 D1 T1 18 17 6 D3 T3 20 19 5 D5 T5 4 D12 D14 D16 14 T7 11 10 D2 T2 12 D4 T4 13 T6 D6 23 24 NTC 8 9 E 72873 Pin configuration see outlines. Features: • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec.
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